| Part Number | G5S06506DT |
| Category |
Discrete Semiconductor Products
Diodes |
| Mfr | Global Power Technology Co. Ltd |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 24A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 \xb5A @ 650 V |
| Capacitance @ Vr, F | 395pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D\xb2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 |
| Operating Temperature - Junction | -55\xb0C ~ 175\xb0C |
| REACH Status | Vendor Undefined |
